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BU2520AX View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BU2520AX
Philips
Philips Electronics Philips
BU2520AX Datasheet PDF : 0 Pages
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ103AU
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES,ICBO
ICES
Collector cut-off current 1
ICEO
IEBO
VCEOsust
VCEsat
VBEsat
hFE
hFE
hFEsat
Collector cut-off current 1
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VCEO = VCEOMmax (400V)
VEB = 7 V; IC = 0 A
IB = 0 A; IC = 10 mA;
L = 25 mH
IC = 3.0 A; IB = 0.6 A
IC = 3.0 A; IB = 0.6 A
IC = 1 mA; VCE = 5 V
IC = 500mA; VCE = 5 V
IC = 2.0 A; VCE = 5 V
IC = 3.0 A; VCE = 5 V
MIN.
-
-
TYP. MAX. UNIT
-
0.1 mA
-
0.5 mA
-
-
0.1 mA
-
-
0.1 mA
400
-
-
V
-
0.25 1.0
V
-
0.97 1.5
V
10 17 32
13 22 32
11 16 22
- 12.5 -
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Switching times (resistive load)
ton
Turn-on time
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
Switching times (inductive load)
ts
Turn-off storage time
tf
Turn-off fall time
CONDITIONS
ICon = 2.5 A; IBon = -IBoff = 0.5 A;
RL = 75 ohms; VBB2 = 4V;
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V
ICon = 2.5 A; IBon = 0.5 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
TYP. MAX. UNIT
0.48 0.6 µs
2.7 3.3 µs
0.27 0.35 µs
1.2 1.4 µs
46 60 ns
1.34 1.8 µs
98 200 ns
1 Measured with half sine-wave voltage (curve tracer).
October 1999
2
Rev 1.100
 

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