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TS1220-600B View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
TS1220-600B Standard 12 A SCRs ST-Microelectronics
STMicroelectronics ST-Microelectronics
TS1220-600B Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Characteristics
TN1215, TYN612, TYN812, TYN1012
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse
duration
1.00
K=[Zth(j-a)/Rth(j-a)]
Device mounted on FR4 with
recommended pad layout
DPAK
0.10
D2PAK
TO-220AB / IPAK
0.01
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2
5E+2
Figure 6. Relative variation of gate trigger and
holding current versus junction temperature
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.4
2.2
2.0
1.8
IGT
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(°C)
0.0
-40 -20
0
20
40
60
TN1215 and TYNx12 Series
IH & IL
80 100 120 140
Figure 7. Surge peak on-state current versus
number of cycles
Figure 8. Non-repetitive surge peak on-state
current and corresponding values of I2t versus
sinusoidal pulse width
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Figure 9. On-state characteristics (maximum
values)
ITM(A)
200
100
Tj max.:
Vt0=0.85V
Rd=30mΩ
Figure 10. Thermal resistance junction to
ambient versus copper surface under tab
(DPAK and D²PAK)
Rth(j-a)(°C/W)
100
Epoxy printed circuit board FR4
copper thickness = 35 µm
80
Tj=max
10
Tj=25°C
60
DPAK
40
D2PAK
20
VTM(V)
1
S(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
2
4
6
8 10 12 14 16 18 20
4/15
DocID7475 Rev 10
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