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TYNX12T View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
TYNX12T Standard 12 A SCRs ST-Microelectronics
STMicroelectronics ST-Microelectronics
TYNX12T Datasheet PDF : 15 Pages
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Characteristics
1
Characteristics
TN1215, TYN612, TYN812, TYN1012
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
IT(RMS)
IT(AV)
ITSM
I2t
dI/dt
IGM
PG(AV)
Tstg
Tj
VRGM
On-state RMS current (180° conduction angle) Tc = 105 °C
Average on-state current (180° conduction angle) Tc = 105 °C
Non repetitive surge peak
on-state current
I2t value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Tj = 25 °C
Tj = 25 °C
Critical rate of rise of on-state
current IG = 2 x IGT, tr 100 ns
F = 60 Hz
Tj = 125 °C
Peak gate current
tp = 20 µs
Tj = 125 °C
Average gate power dissipation
Tj = 125 °C
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse gate voltage
Value
Unit
TN1215 / TYNx12
12
A
8
A
145
A
140
98
A2S
50
A/µ
s
4
A
1
W
- 40 to + 150
- 40 to + 125
°C
5
V
Table 3. Standard electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
TN1215
TYN
Unit
B/G G x12T x12
IGT
VGT
VGD
IH
IL
dV/dt
VTM
Vt0
Rd
IDRM
IRRM
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
IT = 500 mA, gate open
IG = 1.2 IGT
VD = 67% VDRM, gate open
ITM = 24 A tp = 380 µs
Threshold voltage
Dynamic resistance
VDRM = VRRM
Tj = 125 °C
Tj =125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
2
0.5
15
5
1.3
0.2
40
30
15
80
60
30
200
40
1.6
0.85
30
5
2
2
mA
15
V
V
30
mA
60
mA
200 V/µs
V
V
mΩ
µA
mA
2/15
DocID7475 Rev 10
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