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Z00607MA1BA2 Просмотр технического описания (PDF) - STMicroelectronics

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Z00607MA1BA2 0.8 A Triacs - SENSITIVE GATE TRIACS ST-Microelectronics
STMicroelectronics ST-Microelectronics
Z00607MA1BA2 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Z00607MA
Figure 3: Relative variation of thermal
impedance versus pulse duration
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
0.01
1E-3
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2 5E+2
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj (°C)
0.0
-40
-20
0
20
40
60
80
100
120
Figure 5: Surge peak on-state current versus
number of cycles
Figure 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms
and corresponding value of I2t
ITSM (A)
10
9
8
7
6
5
4
Repetitive
Tamb = 25°C
3
2
1
0
1
Non repetitive
Tj initial = 25°C
Number of cycles
10
100
t=20ms
One cycle
1000
ITSM (A), I2t (A2s)
200.0
100.0
dI/dt limitation:
20A/µs
10.0
Tj initial = 25°C
ITSM
1.0
0.1
0.01
tp (ms)
0.10
1.00
I2t
10.00
Figure 7: On-state characteristics (maximum
values)
Figure 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
ITM(A)
10.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
10.0
8.0
Tj = Tjmax.
1.0
Tj = 25°C
6.0
4.0
Tj=max.
Vt0=0.95 V
Rd=420 m
2.0
VTM (V)
0.1
(dV/dt)c (V/µs)
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1.0
10.0
3/6
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