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MMBD101LT1 View Datasheet(PDF) - ON Semiconductor

Part NameDescriptionManufacturer
MMBD101LT1 SILICON SCHOTTKY BARRIER DIODES ON-Semiconductor
ON Semiconductor ON-Semiconductor
MMBD101LT1 Datasheet PDF : 4 Pages
1 2 3 4
MBD101, MMBD101LT1
TYPICAL CHARACTERISTICS
(TA = 25°C unless noted)
1.0
0.7
0.5
0.2
VR = 3.0 V
100
TA = 85°C
10
0.1
0.07
TA = −40°C
0.05
1.0
TA = 25°C
0.02
0.01
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
0.1
0.3
0.4
0.5
0.6
0.7
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0
11
10
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
9.0
(TEST CIRCUIT IN FIGURE 5)
0.9
8.0
7.0
0.8
6.0
5.0
4.0
0.7
3.0
2.0
0.6 0
1.0
1.0
2.0
3.0
4.0
0.1 0.2
0.5
1.0
2.0
5.0
10
VR, REVERSE VOLTAGE (VOLTS)
PLO, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — CD is measured using a capacitance bridge (Boonton
Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
Note 3 — LS is measured on a package having a short instead of a
die, using an impedance bridge (Boonton Radio Model
250A RX Meter).
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