datasheetbank_Logo   Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name :   

UF1001CT View Datasheet(PDF) - Won-Top Electronics

Part NameDescriptionManufacturer
UF1001CT 10A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER Won-Top
Won-Top Electronics Won-Top
UF1001CT Datasheet PDF : 4 Pages
1 2 3 4
WTE
POWER SEMICONDUCTORS
UF1000CT – UF1008CT Pb
10A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER
Features
! Glass Passivated Die Construction
B
! Ultra-Fast Switching
! Low Forward Voltage Drop
C
! Low Reverse Leakage Current
! High Surge Current Capability
G
A
! Plastic Material has UL Flammability
Classification 94V-O
PIN1 2 3
D
Mechanical Data
! Case: TO-220, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Weight: 2.24 grams (approx.)
! Mounting Position: Any
! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
F
E
P
I
H
L
J
K
TO-220
Dim
Min
Max
A
13.90
15.90
B
9.80
10.70
C
2.54
3.43
D
3.56
4.56
E
12.70
14.73
F
0.51
0.96
G
3.55 Ø 4.09 Ø
H
5.75
6.85
I
4.16
5.00
J
2.03
2.92
K
0.30
0.65
L
1.14
1.40
P
2.29
2.79
All Dimensions in mm
PIN 1 -
PIN 3 -
+
Case, PIN 2
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol
UF
UF
UF
UF
UF
UF
1000CT 1001CT 1002CT 1003CT 1004CT 1006CT
UF
1008CT
Unit
VRRM
VRWM
50
100 200 300 400 600 800 V
VR
VR(RMS)
35
70
140 210 280 420 560 V
Average Rectified Output Current @TC = 100°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
@IF = 5.0A
@TA = 25°C
@TA = 125°C
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
IO
IFSM
VFM
IRM
trr
Cj
Tj, TSTG
10
125
1.0
1.3
10
400
50
80
-65 to +150
A
A
1.7
V
µA
100
nS
50
pF
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
UF1000CT – UF1008CT
1 of 4
© 2006 Won-Top Electronics
Direct download click here
 

Share Link : Won-Top
All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]