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C4102 View Datasheet(PDF) - ROHM Semiconductor

Part Name
Description
View to exact match
C4102 Datasheet PDF : 3 Pages
1 2 3
Transistors
2SC4102 / 2SC3906K / 2SC2389S
High-voltage Amplifier Transistor
(120V, 50mA)
2SC4102 / 2SC3906K / 2SC2389S
zFeatures
1) High breakdown voltage. (BVCEO = 120V)
2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Collector power 2SC4102 / 2SC3906K
dissipation
2SC2389S
PC
0.2
0.3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
Denotes hFE
2SC4102
UMT3
RS
T
T106
3000
2SC3906K
SMT3
RS
T
T146
3000
2SC2389S
SPT
RS
TP
5000
zExternal dimensions (Unit : mm)
2SC4102
1.25
2.1
0.1Min.
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
2SC3906K
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
1.6
2.8
0.3Min.
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
2SC2389S
4
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
2
0.45
2.5 0.5 0.45
5
(1) (2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
120
V
IC=50µA
120
V
IC=1mA
5
V
IE=50µA
0.5
µA VCB=100V
0.5
µA VEB=4V
0.5
V
IC/IB=10mA/1mA
180
560
VCE=6V, IC=2mA
140
MHz VCE=12V, IE=−2mA, f=100MHz
2.5
pF VCB=12V, IE=0A, f=1MHz
Rev.A
1/2
 

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