BSM200GB120DL View Datasheet(PDF) - Infineon Technologies
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BSM200GB120DL Datasheet PDF : 9 Pages
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BSM 200 GB 120 DL
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
V
VGE = VCE, IC = 8 mA
4.5
5.5
6.5
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V, IC = 200 A, Tj = 25 °C
-
2.2
2.6
VGE = 15 V, IC = 200 A, Tj = 125 °C
-
2.5
3
Zero gate voltage collector current
ICES
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
-
10
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
-
-
Gate-emitter leakage current
IGES
nA
VGE = 20 V, VCE = 0 V
-
-
400
AC Characteristics
Transconductance
gfs
S
VCE = 20 V, IC = 200 A
110
-
-
Input capacitance
Ciss
nF
VCE = 25 V, VGE = 0 V, f = 1 MHz
-
13
-
Output capacitance
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
-
2
-
Reverse transfer capacitance
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
-
1
-
Semiconductor Group
2
Feb-14-1997
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