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IN74ACT00 View Datasheet(PDF) - Integral Corp.

Part NameDescriptionManufacturer
IN74ACT00 Quad 2-Input NAND Gate High-Speed Silicon-Gate CMOS Integral
Integral Corp. Integral
IN74ACT00 Datasheet PDF : 4 Pages
1 2 3 4
IN74ACT00
DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC Guaranteed Limits
V 25 °C -40°C to Unit
85°C
VIH Minimum High-Level VOUT=0.1 V or VCC-0.1 V
4.5
2.0
2.0
V
Input Voltage
5.5
2.0
2.0
VIL Maximum Low -
VOUT= VCC-0.1 V
Level Input Voltage
4.5
0.8
0.8
V
5.5
0.8
0.8
VOH Minimum High-Level IOUT -50 µA
Output Voltage
*VIN=VIH or VIL
IOH=-24 mA
IOH=-24 mA
VOL Maximum Low-Level IOUT 50 µA
Output Voltage
*VIN=VIH
IOL=24 mA
IOL=24 mA
IIN
Maximum Input
Leakage Current
VIN=VCC or GND
4.5
4.4
4.4
V
5.5
5.4
5.4
4.5 3.86
3.76
5.5 4.86
4.76
4.5
0.1
0.1
V
5.5
0.1
0.1
4.5 0.36
0.44
5.5 0.36
0.44
5.5 ±0.1
±1.0
µA
ICCT Additional Max
VIN=VCC - 2.1 V
5.5
ICC/Input
IOLD +Minimum Dynamic VOLD=1.65 V Max
5.5
Output Current
1.5
mA
75
mA
IOHD +Minimum Dynamic VOHD=3.85 V Min
5.5
Output Current
-75
mA
ICC
Maximum Quiescent VIN=VCC or GND
Supply Current
(per Package)
5.5
4.0
* All outputs loaded; thresholds on input associated with output under test.
+Maximum test duration 2.0 ms, one output loaded at a time.
40
µA
9
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