TIP33CG View Datasheet(PDF) - ON Semiconductor

Part Name

Description

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TIP33CG

NPN High-Power Transistors

ON Semiconductor 

TIP33A, TIP33C

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 2)

(IC = 30 mA, IB = 0)

TIP33A VCEO(sus)

60

TIP33C

100

−

Vdc

−

Collector−Emitter Cutoff Current

(VCE = 30 V, IB = 0)

(VCE = 60 V, IB = 0)

Collector−Emitter Cutoff Current

(VCE = Rated VCEO, VEB = 0)

Emitter−Base Cutoff Current

(VEB = 5.0 V, IC = 0)

TIP33A

TIP33C

ICEO

ICES

IEBO

−

0.7

mA

−

0.4

mA

−

1.0

mA

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 1.0 A, VCE = 4.0 V)

(IC = 3.0 A, VCE = 4.0 V)

hFE

−

40

−

20

100

Collector−Emitter Saturation Voltage

(IC = 3.0 A, IB = 0.3 A)

(IC = 10 A, IB = 2.5 A)

VCE(sat)

Vdc

−

1.0

−

4.0

Base−Emitter On Voltage

(IC = 3.0 A, VCE = 4.0 V)

(IC = 10 A, VCE = 4.0 V)

VBE(on)

Vdc

−

1.6

−

3.0

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz)

Current−Gain — Bandwidth Product

(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz)

2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

hfe

20

−

−

fT

3.0

−

MHz

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