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IRL3103L View Datasheet(PDF) - International Rectifier

Part Name
Description
View to exact match
IRL3103L
IR
International Rectifier IR
IRL3103L Datasheet PDF : 0 Pages
IRL3103S/IRL3103L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 12 mVGS = 10V, ID = 34A „
––– ––– 16
VGS = 4.5V, ID = 28A „
1.0 ––– ––– V VDS = VGS, ID = 250µA
22 ––– ––– S VDS = 25V, ID = 34A„
––– ––– 25
––– ––– 250
µA VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 16V
––– ––– -100
VGS = -16V
––– ––– 33
ID = 34A
––– ––– 5.9 nC VDS = 24V
––– ––– 17
VGS = 4.5V, See Fig. 6 and 13
––– 8.9 –––
VDD = 15V
––– 120 –––
ID = 34A
––– 14 –––
RG = 1.8
––– 9.1 –––
VGS = 4.5V, See Fig. 10 „
––– 4.5 –––
Between lead,
D
6mm (0.25in.)
nH from package
G
––– 7.5 –––
and center of die contact
S
Ciss
Input Capacitance
––– 1650 –––
VGS = 0V
Coss
Output Capacitance
––– 650 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS
Single Pulse Avalanche Energy‚
––– 1320…130† mJ IAS = 34A, L = 0.22mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 64
A showing the
integral reverse
G
––– ––– 220
p-n junction diode.
S
––– ––– 1.2 V TJ = 25°C, IS = 34A, VGS = 0V „
––– 57 86 ns TJ = 25°C, IF = 34A
––– 110 170 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 220µH
RG = 25, IAS = 34A, VGS=10V (See Figure 12)
ƒ ISD 34A, di/dt 120A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 400µs; duty cycle 2%.
… This is a typical value at device destruction and represents
operation outside rated limits.
† This is a calculated value limited to TJ = 175°C .
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
2
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