IRF634N View Datasheet(PDF) - International Rectifier
Part Name
Description
View to exact match
IRF634N Datasheet PDF : 11 Pages
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IRF634N/S/L
1200
1000
800
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
600
Coss
400
Crss
200
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 4.8A
16
VDS = 200V
VDS = 125V
VDS = 50V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 175° C
1
TJ = 25 ° C
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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