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K1195 Просмотр технического описания (PDF) - Shindengen

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K1195 VR Series Power MOSFET Shindengen
Shindengen Shindengen
K1195 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
VR Series Power MOSFET
2SK1195 ( F1E23 )
Electrical Characteristics Tc = 25
Item
Symbole
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 230V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = ±20V, VDS = 0V
Forward Tranconductance
gfs ID = 1.5A, VDS = 10V
Static Drain-Source On-tate Resistance RDS(ON) ID = 1.5A, VGS = 10V
Gate Threshold Voltage
VTH ID = 0.2mA, VDS = 10V
Source-Drain Diode Forward Voltage
VSD IS = 1.5A, VGS = 0V
Thermal Resistance
θjc junction to case
Total Gate Charge
Qg VGS = 10V, ID = 1.5A, VDD = 200V
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss VDS = 10V, VGS = 0V, f = 1MHZ
Output Capacitance
Coss
Turn-On Time
ton ID = 1.5A, VGS = 10V, RL = 67Ω
Turn-Off Time
toff
Min. Typ. Max. Unit
230
V
250 μA
±0.1
0.7 1.4
S
1.2 2 Ω
234 V
1.5
12.5 /
6.9
nC
160
20
pF
90
37 75 ns
50 100
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
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