IRL3102STRR View Datasheet(PDF) - International Rectifier
Part Name
Description
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IRL3102STRR Datasheet PDF : 8 Pages
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IRL3102S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
20 ––– ––– V VGS = 0V, ID = 250µA
––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.015
––– ––– 0.013 W
VGS = 4.5V, ID = 37A
VGS = 7.0V, ID = 37A
0.70 ––– ––– V VDS = VGS, ID = 250µA
36 ––– ––– S VDS = 16V, ID = 35A
––– ––– 25
––– ––– 250
µA VDS = 20V, VGS = 0V
VDS = 10V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 10V
––– ––– -100
VGS = -10V
––– ––– 58
ID = 35A
––– ––– 14 nC VDS = 16V
––– ––– 21
VGS = 4.5V, See Fig. 6
––– 10 –––
VDD = 10V
––– 130 –––
––– 80 –––
––– 110 –––
ns ID = 35A
RG = 9.0W, VGS = 4.5V
RD = 0.28W,
––– 7.5 –––
Between lead,
nH and center of die contact
––– 2500 –––
VGS = 0V
––– 1000 ––– pF VDS = 15V
––– 360 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 61
A showing the
integral reverse
G
––– ––– 240
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 37A, VGS = 0V
––– 59 88 ns TJ = 25°C, IF = 35A
––– 110 160 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.36mH
RG = 25W , IAS = 35A.
ISD £ 35A, di/dt £ 100A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
Pulse width £ 300µs; duty cycle £ 2%.
Uses IRL3102 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
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