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IRL510A View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
View to exact match
IRL510A
Fairchild
Fairchild Semiconductor Fairchild
IRL510A Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
IRL510A
1&+$11(/
32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
BVDSS Drain-Source Breakdown Voltage 100 -- -- V VGS=0V,ID=250µA
BV/TJ Breakdown Voltage Temp. Coeff. -- 0.1 -- V/°C ID=250µA See Fig 7
VGS(th) Gate Threshold Voltage
1.0 -- 2.0 V VDS=5V,ID=250µA
Gate-Source Leakage , Forward
IGSS
Gate-Source Leakage , Reverse
-- -- 100 nA VGS=20V
-- -- -100
VGS=-20V
IDSS
--
Drain-to-Source Leakage Current
--
-- 10
-- 100
VDS=100V
µA VDS=80V,TC=150°C
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
-- -- 0.44 VGS=5V,ID=2.8A
(4)
-- 3.2 --
VDS=40V,ID=2.8A
(4)
-- 180 235
--
50
65
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 20 25
-- 8 25
-- 10 30
VDD=50V,ID=5.6A,
-- 17 45 ns RG=12
See Fig 13 (4) (5)
-- 8 25
-- 5.5 8
VDS=80V,VGS=5V,
-- 0.9 -- nC ID=5.6A
-- 3.5 --
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
(1)
Diode Forward Voltage
(4)
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-- -- 5.6
Integral reverse pn-diode
A
-- -- 20
in the MOSFET
-- -- 1.5 V TJ=25°C, IS=5.6A,VGS=0V
-- 85 -- ns TJ=25°C, IF=5.6A
-- 0.23 -- µC diF/dt=100A/µs
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=3mH, IAS=5.6A, VDD=25V, RG=27, Starting TJ =25°C
(3) ISD 5.6A, di/dt 250A/µs, VDD BVDSS, Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle 2%
(5) Essentially Independent of Operating Temperature
2
 

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