K3298 View Datasheet(PDF) - NEC => Renesas Technology
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K3298 Datasheet PDF : 8 Pages
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2SK3298
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
10
IAS = 7.5 A
EAS = 37.5 mJ
1.0
RG = 25 Ω
VDD = 150 V
VGS = 20 V → 0 V
Starting Tch = 25˚C
0.1
10 µ
100 µ
1m
L - Inductive Load - H
10 m
PACKAGE DRAWING (Unit : mm)
Isolated TO-220 (MP-45F)
10.0±0.3
4.5±0.2
φ 3.2±0.2
2.7±0.2
0.7±0.1
2.54 TYP.
1.3±0.2
1.5±0.2
2.54 TYP.
2.5±0.1
0.65±0.1
123
1.Gate
2.Drain
3.Source
SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
VDD = 150 V
RG = 25 Ω
100
VGS = 20 V → 0 V
IAS ≤ 7.5 A
80
60
40
20
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - ˚C
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Body
Diode
Source (S)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D14059EJ1V0DS00
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