K3298 View Datasheet(PDF) - NEC => Renesas Technology
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K3298 Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3298
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3298
Isolated TO-220
FEATURES
•Low gate charge
QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A)
•Gate voltage rating ±30 V
•Low on-state resistance
RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 4.0 A)
•Avalanche capability ratings
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS
600
V
Gate to Source Voltage (VDS = 0 V) VGSS
±30
V
Drain Current (DC) (TC = 25°C)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±7.5
A
±30
A
Total Power Dissipation (TA = 25°C) PT1
2.0
W
Total Power Dissipation (TC = 25°C) PT2
40
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Single Avalanche Current Note2
IAS
Single Avalanche Energy Note2
EAS
7.5
A
37.5
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14059EJ1V0DS00 (1st edition)
Date Published April 2000 NS CP(K)
The mark 5 shows major revised points.
Printed in Japan
©
1999, 2000
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