datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

STD20NE03L View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
STD20NE03L Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STD20NE03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
S ymb ol
td(on)
tr
Qg
Qgs
Qgd
P a ra m et er
Turn-on Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 15 V
RG =4.7
VDD = 24 V
ID = 20 A
VGS = 5 V
ID = 40 A VGS = 5 V
Min.
Typ .
25
160
29
12
14
Max.
33
210
38
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
S ymb ol
tr(Vo f f)
tf
tc
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 24 V
RG =4.7
ID = 40 A
VGS = 5 V
Min.
Typ .
25
120
155
Max.
33
160
210
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
(pulsed)
VSD () Forward On Voltage
ISD = 20 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
ISD = 40 A
VDD = 20 V
Charge
IRRM Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ .
Max.
20
100
Unit
A
A
1.5
V
50
ns
0.9
µC
3.5
A
Safe Operating Area
Thermal Impedance
3/9
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]