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MJ11022 View Datasheet(PDF) - ON Semiconductor

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MJ11022 Datasheet PDF : 5 Pages
1 2 3 4 5
MJ11021(PNP) MJ11022 (NPN)
1.0
0.7
0.5 D = 0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 1.0
0.2 0.3 0.5 1.0
RqJC(t) = r(t) RqJC
RqJC(t) = 0.86°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (ms)
Figure 3. Thermal Response
5.0 ms 1.0 ms 0.5 ms
30
0.1 ms
20
10
dc
5.0
3.0
2.0
TJ = 175°C
SECOND BREAKDOWN LIMIT
1.0
BONDING WIRE LIMIT
0.5
THERMAL LIMITATION @ TC = 25°C
0.3
SINGLE PULSE
0.2
0
3.0 5.0 7.0 10
20 30 50 70 100 150200
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias Safe
Operating Area (FBSOA)
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on TJ(pk) = 175_C, TC is
variable dependIng on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 175_C. TJ(pk) may be calculated from the data in
Figure 3. At high case temperatures thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
30
L = 200 mH
IC/IB1 50
TC = 25°C
20
VBE(off) 0 − 5.0 V
RBE = 47 W
DUTY CYLE = 10%
10
0
0 20
60 100 140 180 220 260
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum RBSOA, Reverse Bias Safe
Operating Area
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be hold to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives ROSOA characteristics.
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