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PZT3906-2013 View Datasheet(PDF) - Fairchild Semiconductor

Part NameDescriptionManufacturer
PZT3906(2013) PNP General-Purpose Amplifier Fairchild
Fairchild Semiconductor Fairchild
PZT3906 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Test Condition
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
Voltage(4)
IC = -1.0 mA, IB = 0
V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0
V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0
IBL
Base Cutoff Current
VCE = -30 V, VBE = 3.0 V
ICEX Collector Cutoff Current
VCE = -30 V, VBE = 3.0 V
ON CHARACTERISTICS
hFE
DC Current Gain(4)
VCE(sat)
Collector-Emitter Saturation Volt-
age
VBE(sat) Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
IC = -10 mA, VCE = -1.0 V
IC = -50 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0V
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
fT
Current Gain - Bandwidth Product
IC = -10 mA, VCE = -20 V,
f = 100 MHz
Cobo Output Capacitance
VCB = -5.0 V, IE = 0,
f = 100 kHz
Cibo
Input Capacitance
VEB = -0.5 V, IC = 0,
f = 100 kHz
NF
Noise Figure
IC = -100 μA, VCE = -5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS
td
tr
ts
tf
Note:
Delay Time
Rise Time
Storage Time
Fall Time
VCC = -3.0 V, VBE = -0.5 V
IC = -10 mA, IB1 = -1.0 mA
VCC = -3.0 V, IC = -10 mA,
IB1 = IB2 = -1.0 mA
4. Pulse Test: Pulse Width 300μs, Duty Cycle 2.0%.
Min.
-40
-40
-5.0
60
80
100
60
30
-0.65
250
Max. Units
V
V
V
-50
nA
-50
nA
300
-0.25
V
-0.4
V
-0.85
V
-0.95
V
MHz
4.5
pF
10.0
pF
4.0
dB
35
ns
35
ns
225
ns
75
ns
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.1
3
www.fairchildsemi.com
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