KTA1266O View Datasheet(PDF) - KEC
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| KTA1266O Datasheet PDF : 0 Pages | |||
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent hFE Linearity
: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
Low Noise : NF=1dB(Typ.). at f=1kHz.
Complementary to KTC3198.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IB
PC
Tj
-50
-50
-5
-150
-50
625
150
Storage Temperature Range
Tstg
-55 150
UNIT
V
V
V
mA
mA
mW
KTA1266
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Base Intrinsic Resistance
ICBO
IEBO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
rbb'
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA
VCB=-10V, IE=0, f=1MHz
VCB=-10V, IE=1mA, f=30MHz
Noise Figure
NF
VCE=-6V, IC=-0.1mA, Rg=10k , f=1kHz
Note : hFE(1) Classification O:70 140, Y:120 240, GR:200 400
MIN.
-
-
70
25
-
-
80
-
-
-
TYP.
-
-
-
-
-0.1
-
-
4.0
30
1.0
MAX.
-0.1
-0.1
400
-
-0.3
-1.1
-
7.0
-
10
UNIT
A
A
V
V
MHz
pF
dB
2002. 9. 12
Revision No : 2
1/2
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