Q68000-A3386 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

Q68000-A3386

PNP Silicon AF Transistors

Infineon Technologies 

SMBTA 55

SMBTA 56

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

SMBTA 55

SMBTA 56

Collector-base breakdown voltage

IC = 100 µA

SMBTA 55

SMBTA 56

Emitter-base breakdown voltage

IE = 10 µA

Collector-base cutoff current

VCB = 60 V

VCB = 80 V

VCB = 60 V, TA = 150 ˚C

VCB = 80 V, TA = 150 ˚C

SMBTA 55

SMBTA 56

SMBTA 55

SMBTA 56

Collector cutoff current

VCE = 60 V

DC current gain1)

IC = 10 mA, VCE = 1 V

IC = 100 mA, VCE = 1 V

Collector-emitter saturation voltage1)

IC = 100 mA, IB = 10 mA

Base-emitter saturation voltage1)

IC = 100 mA, VCE = 1 V

AC characteristics

Transition frequency

IC = 20 mA, VCE = 5 V, f = 20 MHz

Output capacitance

VCB = 10 V, f = 1 MHz

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

V

60

–

–

80

–

–

V(BR)CB0

60

–

–

80

–

–

V(BR)EB0 4

–

–

ICB0

–

–

100 nA

–

–

100 nA

–

–

20

µA

–

–

20

µA

ICE0

–

–

100 nA

hFE

VCEsat

–

100 –

–

100 130 170

–

–

0.25 V

VBE

–

–

1.2

fT

–

Cobo

–

100 –

12 –

MHz

pF

1) Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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