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2SA1302 View Datasheet(PDF) - Toshiba

Part Name
Description
View to exact match
2SA1302 Datasheet PDF : 2 Pages
1 2
TOSHIBA
Discrete Semiconductors
Transistor
Silicon PNP Epitaxial Type (PCT Process)
For General Purpose Switching and
Amplifier Applications
Features
• Complementary to 2SC3281
• Recommended for 100W High Fidelity Audio Frequency
- Amplifier Output Stage
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
VCBO
-200
V
VCEO
-200
V
VEBO
-5
V
IC
-15
A
IB
-1.5
A
PC
150
W
Tj
150
°C
Tstg
-55 ~ 150 °C
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Volt-
age
DC Current Gain
Saturation Voltage Collector-Emit-
ter
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR) CEO)
VCB = -200V, IE = 0
VEB = -5V, IC = 0
IC = -50mA, IB = 0
hFE(1)
(Note)
hFE(2)
VCE(sat)
VCE = -5V, IC = -1mA
VCE = -5V, IC = -8A
IC = -10A, IB = -1A
VBE
VCE = -5V, IC = -8A
fT
VCE = -5V, IC = -1A
Cob
VCB = -10V, IE = 0,
f = 1MHz
Note: hFE (1) Classification R : 0: 55 ~ 110, 0 : 80 ~ 160
MIN. TYP. MAX. UNIT
-200
-5.0
µA
-5.0
µA
V
55
160
35
60
-1.5
-3.0
V
-1.0
-1.5
V
25
-
MHz
470
-
pF
TOSHIBA CORPORATION
2SA1302
Unit in mm
1/2
 

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