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BCP52-10 View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BCP52-10
Philips
Philips Electronics Philips
BCP52-10 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP medium power transistors
Product specification
BCP51; BCP52; BCP53
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V)
Medium power (max. 1.3 W).
APPLICATIONS
Audio, telephony and automotive applications
Thick and thin-film circuits.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
DESCRIPTION
PNP medium power transistor in a SOT223 plastic
package. NPN complements: BCP54, BCP55 and BCP56.
1
3
1
2
3
Top view
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BCP51
BCP52
BCP53
collector-emitter voltage
BCP51
BCP52
BCP53
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
MIN.
MAX.
UNIT
45
V
60
V
100
V
45
V
60
V
80
V
5
V
1
A
1.5
A
0.2
A
1.3
W
65
+150
°C
150
°C
65
+150
°C
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Apr 08
2
 

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