BCV64B_3 View Datasheet(PDF) - NXP Semiconductors.
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NXP Semiconductors
BCV64B
PNP general-purpose double transistor
1000
hFE
800
mgt715
600
(1)
400
(2)
200
(3)
0
−10−2 −10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. DC current gain as a function of collector
current; typical values
−104
VCEsat
(mV)
mgt717
−103
−102
(1)
(3) (2)
−10
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. Collector-emitter saturation voltage as a
function of collector current; typical values
−1200
VBE
(mV)
−1000
mgt716
(1)
−800
(2)
−600
(3)
−400
−200
0
−10−2 −10−1
−1
−10
−102
−103
IC (mA)
VCE = −5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 2. Base-emitter voltage as a function of collector
current; typical values
−1200
VBEsat
(mV)
−1000
(1)
−800
(2)
−600
(3)
−400
mgt718
−200
0
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. Base-emitter saturation voltage as a function
of collector current; typical values
BCV64B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 2 August 2010
© NXP B.V. 2010. All rights reserved.
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