NXP Semiconductors
BCV64B
PNP general-purpose double transistor
7. Characteristics
Table 8. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Per transistor
ICBO
collector-base
cut-off current
VCEsat
collector-emitter
saturation voltage
VBEsat
base-emitter
saturation voltage
Transistor TR1
VCB = −30 V; IE = 0 A
-
VCB = −30 V; IE = 0 A;
-
Tj = 150 °C
IC = −10 mA;
-
IB = −0.5 mA
IC = −10 mA;
[2] -
IB = −0.5 mA
hFE
VCEsat
VBEsat
VBE
fT
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
VCE = −5 V;
IC = −2 mA
IC = −100 mA;
IB = −5 mA
IC = −100 mA;
IB = −5 mA
IC = −2 mA;
VCE = −5 V
IC = −10 mA;
VCE = −5 V
VCE = −5 V;
IC = −10 mA;
f = 100 MHz
220
-
[2] -
[3] −600
[3] -
100
Cc
collector capacitance VCB = −10 V;
-
IE = ie = 0 A;
f = 1 MHz
Transistor TR2
hFE
VCEsat
VBE
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
VCE = −700 mV;
IC = −2 mA
IC = −100 mA;
IB = −5 mA
IC = −2 mA;
VCE = −700 mV
[1] 220
-
[3] -
[1] Due to matched dies, hFE values for TR2 are the same as for TR1.
[2] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[3] VBE decreases by about 2 mV/K with increasing temperature.
Typ
-
-
−75
−700
-
−250
−850
−650
-
-
4
-
−250
−700
Max
−15
−5
−300
-
475
−650
-
−750
−820
-
-
475
-
-
Unit
nA
μA
mV
mV
mV
mV
mV
mV
MHz
pF
mV
mV
BCV64B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 2 August 2010
© NXP B.V. 2010. All rights reserved.
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