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BCV64B_3 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
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BCV64B_3
NXP
NXP Semiconductors. NXP
BCV64B_3 Datasheet PDF : 0 Pages
NXP Semiconductors
BCV64B
PNP general-purpose double transistor
7. Characteristics
Table 8. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Per transistor
ICBO
collector-base
cut-off current
VCEsat
collector-emitter
saturation voltage
VBEsat
base-emitter
saturation voltage
Transistor TR1
VCB = 30 V; IE = 0 A
-
VCB = 30 V; IE = 0 A;
-
Tj = 150 °C
IC = 10 mA;
-
IB = 0.5 mA
IC = 10 mA;
[2] -
IB = 0.5 mA
hFE
VCEsat
VBEsat
VBE
fT
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
transition frequency
VCE = 5 V;
IC = 2 mA
IC = 100 mA;
IB = 5 mA
IC = 100 mA;
IB = 5 mA
IC = 2 mA;
VCE = 5 V
IC = 10 mA;
VCE = 5 V
VCE = 5 V;
IC = 10 mA;
f = 100 MHz
220
-
[2] -
[3] 600
[3] -
100
Cc
collector capacitance VCB = 10 V;
-
IE = ie = 0 A;
f = 1 MHz
Transistor TR2
hFE
VCEsat
VBE
DC current gain
collector-emitter
saturation voltage
base-emitter voltage
VCE = 700 mV;
IC = 2 mA
IC = 100 mA;
IB = 5 mA
IC = 2 mA;
VCE = 700 mV
[1] 220
-
[3] -
[1] Due to matched dies, hFE values for TR2 are the same as for TR1.
[2] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[3] VBE decreases by about 2 mV/K with increasing temperature.
Typ
-
-
75
700
-
250
850
650
-
-
4
-
250
700
Max
15
5
300
-
475
650
-
750
820
-
-
475
-
-
Unit
nA
μA
mV
mV
mV
mV
mV
mV
MHz
pF
mV
mV
BCV64B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 2 August 2010
© NXP B.V. 2010. All rights reserved.
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