D1012 View Datasheet(PDF) - SANYO -> Panasonic

Part Name

Description

View to exact match

D1012

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

2SB808/2SD1012

Parameter

Collector-to-Emitter Saturation Voltage

Symbol

Conditions

VCE(sat)1 IC=(–)5mA, IB=(–)0.5mA

Collector-to-Emitter Saturation Voltage

VCE(sat)2 IC=(–)100mA, IB=(–)10mA

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Votage

VBE(sat)

V(BR)CBO

V(BR)CEO

V(BR)EBO

IC=(–)100mA, IB=(–)10mA

IC=(–)10µA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)10µA, IC=0

* : The 2SB808/2SD1012 are classified by 50mA hFE as follows :

2SB808

160 F 320 280 G 560

2SD1012 160 F 320 280 G 560 480 H 960

Ratings

Unit

min typ max

(–15) (–35) mV

10

25 mV

(–60) (–120) mV

30

80 mV

(–)0.8 (–)1.2 V

(–)20

V

(–)15

V

(–)5

V

No.676–2/5

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