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J176 Ver la hoja de datos (PDF) - InterFET

Número de pieza
componentes Descripción
fabricante
J176 Datasheet PDF : 1 Pages
1
01/99
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B-53
J176, J177
P-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 30 V
50 mA
360 mW
3.27 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
Drain Cutoff Current
Dynamic Electrical Characteristics
Drain Source ON Resistance
Dynamic Electrical Characteristics
Drain Gate Capacitance
Source Gate Capacitance
Drain Gate + Source Gate Capacitance
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
V(BR)GSS
IGSS
VGS(OFF)
IDSS
ID(OFF)
rds(on)
Cgd
Cgs
Cgd + Cgs
J176
J177
Min Max Min Max Unit
30
30
V
1
1 nA
1 4 0.8 2.25 V
– 2 – 35 – 1.5 – 20 mA
–1
– 1 nA
Max
Max
250
300
Typ
Typ
5.5
5.5
pF
5.5
5.5
pF
32
32
pF
td(on)
15
20
ns
tr
20
25
ns
td(off)
15
20
ns
tf
20
25
ns
Process PJ99
Test Conditions
IG = 1 µA, VDS = ØV
VGS = 20V, VDS = ØV
VDS = – 15V, ID = – 10 nA
VDS = – 15V, VGS = ØV
VDS = – 15V, VGS = 10V
VGS = Ø, VDS < = 0.1V
f = 1 kHz
VDS = ØV, VGS = 10V
VDS = ØV, VGS = 10V
VDS = VGS = ØV
f = 1 MHz
f = 1 MHz
f = 1 MHz
VDD
VGS(OFF)
RL
VGS(ON)
J176 J177
–6
–6
V
6
3
V
5.6 k
10 k
Ø
Ø
V
TOÐ226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Gate, 3 Source
www.interfet.com
Surface Mount
SMPJ176, SMPJ177
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
 

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