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J175 查看數據表(PDF) - Philips Electronics

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J175 P-channel silicon field-effect transistors Philips
Philips Electronics Philips
J175 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Philips Semiconductors
P-channel silicon field-effect transistors
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Input capacitance, f = 1 MHz
VGS = 10 V; VDS = 0 V
VGS = VDS = 0
Feedback capacitance, f = 1 MHz
VGS = 10 V; VDS = 0 V
Switching times (see Fig.2 + 3)
Delay time
Rise time
Turn-on time
Storage time
Fall time
Turn-off time
Test conditions:
Cis
Cis
Crs
td
tr
ton
ts
tf
toff
VDD
VGS off
RL
VGS on
Product specification
J174; J175;
J176; J177
typ.
8
pF
typ.
30
pF
typ.
4
pF
J174 J175 J176 J177
typ.
2
5
15 20 ns
typ.
5 10 20 25 ns
typ.
7 15 35 45 ns
typ.
5 10 15 20 ns
typ.
10 20 20 25 ns
typ.
15 30 35 45 ns
10
6
12
8
560 1200
0
0
6 6V
6 3V
2000 2900
0 0V
handbook, halfpage
VDD
50
Vout
RL
Vin
50
D.U.T
MBK292
Fig.2 Switching times test circuit.
VGSoff
INPUT
10%
OUTPUT
10%
90%
tf
ts
90%
10%
90%
tr
td
MBK293
Fig.3 Input and output waveforms;
td + tr = ton ; ts + tf = toff.
April 1995
4
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