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J175 View Datasheet(PDF) - Philips Electronics

Part NameDescriptionManufacturer
J175 P-channel silicon field-effect transistors Philips
Philips Electronics Philips
J175 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Philips Semiconductors
P-channel silicon field-effect transistors
Product specification
J174; J175;
J176; J177
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate current (DC)
Total power dissipation
± VDS
VGSO
VGDO
IG
up to Tamb = 50 °C
Ptot
Storage temperature range
Tstg
Junction temperature
Tj
max.
max.
max.
max.
max.
max.
30
V
30
V
30
V
50
mA
400
mW
65 to +150 °C
150
°C
THERMAL RESISTANCE
From junction to ambient in free air
Rth j-a
=
250
K/W
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Gate cut-off current
VGS = 20 V; VDS = 0
Drain cut-off current
VDS = 15 V; VGS = 10 V
Drain current
VDS = 15 V; VGS = 10 V
Gate-source breakdown voltage
IG = 1 µA; VDS = 0
Gate-source cut-off voltage
ID = 10 nA; VDS = 15 V
Drain-source ON-resistance
VDS = 0.1 V; VGS = 0
J174 J175 J176 J177
IGSS
IDSX
IDSS
max.
1
1
1 1 nA
max.
1
1
1 1 nA
min.
max.
20
7
135 70
2 1.5 mA
35 20 mA
V(BR)GSS min.
VGS off
min.
max.
30 30 30 30 V
5
3
10
6
1 0.8 V
4 2.25 V
RDSon
max.
85 125 250 300
April 1995
3
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