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STT2PF60L View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STT2PF60L Datasheet PDF : 6 Pages
1 2 3 4 5 6
STT2PF60L
THERMAL DATA
Rthj-amb
Rthj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
(**)Thermal Resistance Junction-ambient
Max. Operating Junction Temperature
Storage Temperature
(*) Mounted on a 1 in2 pad of 2 oz Cu in FR-4 board
(**) Mounted on a minimum pad of 2 oz Cu in FR-4 board
Max
78
Max
156
150
-55 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
60
Breakdown Voltage
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
±100
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 4.5 V
ID = 1 A
ID = 1 A
Min.
1
Typ.
0.20
0.24
Max.
0.25
0.30
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 10 V
ID =1 A
VDS = 25V f = 1 MHz, VGS = 0
Min.
Typ.
3
313
67
25
Max.
Unit
S
pF
pF
pF
2/6
 

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