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4N25V View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
View to exact match
4N25V
Vishay
Vishay Semiconductors Vishay
4N25V Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
4N25(G)V/ 4N35(G)V Series
Vishay Telefunken
Maximum Safety Ratings (according to VDE 0884) see figure 1
This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.
Input (Emitter)
Parameters
Forward current
Output (Detector)
Test Conditions
Symbol
Value
Unit
Isi
130
mA
Parameters
Power dissipation
Coupler
Test Conditions
Symbol
Value
Unit
Tamb 25°C
Psi
265
mW
Parameters
Rated impulse voltage
Safety temperature
Test Conditions
Symbol
Value
Unit
VIOTM
6
kV
Tsi
150
Insulation Rated Parameters (according to VDE 0884)
Parameter
Test Conditions
Symbol Min. Typ. Max.
Unit
Partial discharge test voltage – 100%, ttest = 1 s
Vpd
1.6
kV
Routine test
Partial discharge test voltage – tTr = 60 s, ttest = 10 s, VIOTM
6
kV
Lot test (sample test)
Insulation resistance
(see figure 2)
VIO = 500 V
VIO = 500 V,
Vpd
1.3
RIO
1012
RIO
1011
kV
W
W
Tamb = 100°C
VIO = 500 V,
RIO
109
W
Tamb = 150°C
(construction test only)
VIOTM
300
V
250
Phototransistor
Psi ( mW )
200
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
VPd
150
VIOWM
VIORM
100
50
0
0
94 9182
IR-Diode
Isi ( mA )
25 50 75 100 125 150
Tsi – Safety Temperature ( °C )
Figure 1. Derating diagram
0
t1
13930
tTr = 60 s
t3 ttest t4
t2 tstres
t
Figure 2. Test pulse diagram for sample test according to
DIN VDE 0884
Rev. A4, 11–Jan–99
89
 

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