Philips Semiconductors
Speech and handsfree IC
Product specification
TEA1098A
SYMBOL
PARAMETER
CONDITIONS
MIN.
TX AMPLIFIER USING HFTX (PINS HFTX AND LN)
Gv(HFTX-LN)
voltage gain from pin
HFTX to LN
VHFTX = 15 mV (RMS)
∆Gv(f)
gain variation with
f = 300 to 3400 Hz
frequency referenced to
1 kHz
∆Gv(T)
gain variation with
Tamb = −25 to +75°C
temperature referenced
to 25 °C
THD
total harmonic
distortion at LN
VLN = 1.4 V (RMS)
VHFTX(rms)
maximum input voltage Iline = 70 mA; THD = 2%
at HFTX (RMS value)
Vno(LN)
∆Gv(m)
noise output voltage at
pin LN; pin HFTX
shorted to GND
through 200 Ω in series
with 10 µF
psophometrically weighted
(p53 curve)
gain reduction when
muted
MUTE = 0; see Table 2
∆Gv(MIC)(mute)
gain reduction in
MUTE = 1; BPC = 0;
microphone mute mode see Table 2
33.5
−
−
−
−
−
60
60
RX amplifiers
RX AMPLIFIERS USING IR (PINS IR AND RECO)
Gv(IR-RECO)(HF)
voltage gain from IR to VIR = 4 mV (RMS); HFC = 1 28.4
RECO (handsfree
mode)
Gv(IR-RECO)(HS)
voltage gain from IR to VIR = 4 mV (RMS); HFC = 0; 16.2
RECO (handset mode) EVCI = 0
∆Gv(IR-RECO)
digital volume control
adjustment range in
handset mode
VIR = 4 mV (RMS); HFC = 0; 13
EVCI = VDD
∆Gv(IR-RECO)
digital volume control HFC = 0; per step
−
adjustment step in
handset mode
∆Gv(f)
gain variation with
f = 300 to 3400 Hz
−
frequency referred to
1 kHz
∆Gv(T)
VIR(max)(rms)
gain variation with
Tamb = −25 to +75 °C
−
temperature referenced
to 25 °C
maximum input voltage Iline = 70 mA; THD = 2%
−
on IR (referenced to
LN) (RMS value)
TYP.
34.7
±0.25
±0.35
−
85
−77
80
−
29.4
17.2
14.5
+4.85
±0.25
±0.3
50
MAX.
35.9
−
−
2
−
−
−
−
30.4
18.2
16
−
−
−
−
UNIT
dB
dB
dB
%
mV
dBmp
dB
dB
dB
dB
dB
dB
dB
dB
mV
2000 Aug 18
24