2SC3470 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
View to exact match
2SC3470 Datasheet PDF : 5 Pages
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2SC3470
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
Unit
55
V
50
V
5
V
100
mA
300
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown
V(BR)CBO
55
—
voltage
Collector to emitter breakdown V(BR)CEO 50
—
voltage
Emitter to base breakdown
V(BR)EBO
5
—
voltage
Collector cutoff current
I CBO
—
—
Emitter cutoff current
I EBO
—
—
DC current transfer ratio
hFE*1
250 —
Base to emitter voltage
VBE
—
—
Collector to emitter saturation VCE(sat) —
—
voltage
Gain bandwidth product
fT
—
230
Collector output capacitance Cob
—
1.8
Note: 1. The 2SC3470 is grouped by hFE as follows.
D
E
F
250 to 500 400 to 800 600 to 1200
Max Unit
—
V
—
V
—
V
0.5 µA
0.5 µA
1200
0.75 V
0.2 V
—
MHz
3.5 pF
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 18 V, IE = 0
VEB = 2 V, IC = 0
VCE = 12 V, IC = 2 mA
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
VCE = 12 V, IC = 2 mA
VCB = 10 V, IE = 0, f = 1 MHz
See characteristic curves of 2SC1345.
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