BCP68 View Datasheet(PDF) - NXP Semiconductors.
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NXP Semiconductors
BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
collector-base voltage
open emitter
-
collector-emitter voltage
open base
-
emitter-base voltage
open collector
-
collector current
-
peak collector current
single pulse;
-
tp 1 ms
base current
-
peak base current
single pulse;
-
tp 1 ms
total power dissipation
Tamb 25 C
BCP68
[1] -
[2] -
[3] -
BC868
[1] -
[2] -
[3] -
BC68PA
[1] -
[2] -
[3] -
[4] -
[5] -
Tj
junction temperature
-
Tamb
ambient temperature
55
Tstg
storage temperature
65
Max Unit
32
V
20
V
5
V
2
A
3
A
0.4
A
0.4
A
0.65 W
1.00 W
1.35 W
0.50 W
0.95 W
1.35 W
0.42 W
0.83 W
1.10 W
0.81 W
1.65 W
150
C
+150 C
+150 C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2.
BCP68_BC868_BC68PA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 October 2011
© NXP B.V. 2011. All rights reserved.
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