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HY6264A-I Datasheet PDF - Hyundai Micro Electronics

Part Name
Description
MFG CO.
HY6264A-I
Hyundai
Hyundai Micro Electronics 
Other PDF
  no available.
PDF
HY6264A-I Datasheet PDF : HY6264A-I pdf     
HY6264A-I image

DESCRIPTION
The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundais high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns.

 

Part Name
Description
PDF
MFG CO.
8K X 8 BIT LOW POWER CMOS SRAM
Unspecified
8K X 8 BIT HIGH SPEED CMOS SRAM
Alliance Semiconductor
8K X 8 BIT LOW POWER CMOS SRAM
Alliance Semiconductor
8K x 8-Bit CMOS SRAM
Hynix Semiconductor
8K X 8 BIT LOW POWER CMOS SRAM
Alliance Semiconductor
8K X 8 CMOS SRAM
ROHM Semiconductor
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package)
MITSUBISHI ELECTRIC
8K x 8 Speed CMOS SRAM
UMC Corporation
8K X 8 BIT CMOS SRAM
AMIC Technology
CMOS 8K x 8 ZEROPOWER SRAM
STMicroelectronics

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